Quantum well semiconductor laser device structure

Details Quantum well semiconductor laser device structure Quantum well semiconductor laser device structure

1994-05-12

1996-06-18

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

055286143

ABSTRACT:
A quantum well type semiconductor laser structure includes light confining layers having an MQB structure including a plurality of semiconductor layers having different compositions laminated alternatingly, the compositions, thicknesses, and number of layers producing an energy barrier higher than the energy barrier inherent to the materials for carriers injected into the active layer, a refractive index distribution in the vicinity of the active layer concentrating the electric field in the active layer, and the quantum barrier layers disposed in contact with the active layer. Therefore, the light confinement in the active layer is increased and the overflow of carriers into the light confinement layer is suppressed whereby the threshold current of the quantum well laser is reduced and the external quantum efficiency is enhanced. A quantum well laser includes, as a barrier layer of an active layer having a multiquantum well structure, a barrier layer having an MQB structure that produces an energy barrier higher than the energy barrier inherent to the materials for carriers injected into the well layer. Therefore, similar effects are obtained.

REFERENCES:
patent: 5345464 (1994-09-01), Takamoto
Rennie et al, "High Temperature (90.degree. C.) CW Operation Of 646nm InGaA1P Laser Containing Multiquantum Barrier", Electronics Letters, vol. 28, No. 2, Jan. 1992, pp. 150-151.
Iga et al, "Electron Reflectance Of Multiquantum Barrier (MQB)", Electronic Letters, vol. 22, No. 19, Sep. 1986, pp. 1008-1009.
Shima, "670nm Window Laser Diode Performs 150mW Signal Transverse-Mode Operation", Journal of Electronics Engineering, vol. 30, No. 313, Jan. 1993, pp. 100-103.

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