Quantum well semiconductor laser device

Details Quantum well semiconductor laser device Quantum well semiconductor laser device

1987-08-04

1989-08-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

048602973

ABSTRACT:
In a semiconductor laser device comprising In(Ga.sub.1-x Al.sub.x)P cladding layers and an active region which has one or more In(Ga.sub.1-y Al.sub.y)P (y<x) quantum well layers and which is sandwiched by said cladding layers, superlatticed structures having an altervative lamination of In(Ga.sub.1-x Al.sub.x)P layers and In(Ga.sub.1-y Al.sub.y)P layers are disposed in contact with said cladding layers and/or said quantum well layers.

REFERENCES:
patent: 4573161 (1986-02-01), Sakai et al.
patent: 4644378 (1987-02-01), Williams
patent: 4750182 (1988-06-01), Takahashi et al.
Tokuda et al., (1986) J. Appl. Phys. 60(8):2729-2734.

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