Quantum well semiconductor laser device

Details Quantum well semiconductor laser device Quantum well semiconductor laser device

1987-02-09

1988-11-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, H01S 319

Patent

active

047870893

ABSTRACT:
A semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure which is composed of alternate layers consisting of thin GaAs layers and thin Al.sub.x Ga.sub.1-x As (0<x<1) layers, each of said layers having a thickness of five molecular layers or less and each of said quantum well regions having a thickness in the range of 100 .ANG. to 150 .ANG..

REFERENCES:
patent: 4261771 (1981-04-01), Dingle et al.
patent: 4644378 (1987-02-01), Williams
W. T. Tsang: Appl. Phys. Lett., 39(10), Nov. 15, 1981.
N. K. Dutta: J. Appl. Phys., 53(11), Nov. 1982.
H. Iwamura et al: Electronics Letters, vol. 19, No. 5, Mar. 3, 1983.
R. C. Miller et al, Phys Rev B (1984), 29:3740-43 (Miller).
J. J. Coleman et al, Appl. Phys. Lett. (1981), 38(2):63-65.

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