Quantum well semiconductor laser

Details Quantum well semiconductor laser Quantum well semiconductor laser

1990-07-02

1992-01-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

050816349

ABSTRACT:
The quantum well semiconductor laser has at least one ultrafine layer with a thickness smaller than the critical thickness, the material of which is isoelectronic with that of the well.

REFERENCES:
patent: 4860297 (1989-08-01), Hayakawa et al.
patent: 4881238 (1989-11-01), Chinone et al.
patent: 4905246 (1990-02-01), Hayakawa et al.
patent: 4961197 (1990-10-01), Tanaka et al.
Applied Physics Letters, vol. 51, No. 4, Jul. 1987, pp. 209-211, New York, Y. Tokuda et al., "Lasing Wavelength of An Asymmetric Double Quantum Well Laser Diode", p. 209, FIG. 1.
IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, pp. 696-703, New York, L. J. Mawst et al., "Optimization and Characterization of Index-Guided Visible AlGaAs/GaAs Graded Barrier Quantum Well Laser Diodes", Chapitre II, Fig. 1.
Applied Physics Letters, vol. 51, No. 2, Jul. 1987, pp. 78-80, New York, K. Uomi et al., "Ultrahigh Relaxation Oscillation Frequency (up to 30 GHz) of Highly P-Doped GaAs/GaA as Multiple Quantum Well Lasers", p. 78, Fig. 1.

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