Quantum well semiconductor laser

Details Quantum well semiconductor laser Quantum well semiconductor laser

1995-02-09

1996-06-04

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

055240178

ABSTRACT:
In a quantum well semiconductor laser in which a stripe-like multilayered structure having a cladding layer of a first conductivity type, a quantum well active layer, and a cladding layer of a second conductivity type is formed on a semiconductor substrate or a semiconductor base layer, and multilayered structures identical to the stripe-like multilayered structure are formed along two sides of the stripe-like multilayered structure with grooves interposed in between, where each groove has a width smaller at portions near end face portions of a resonator than at a central portion thereof, and a quantum well layer of the quantum well active layer has a smaller thickness at the portions near the end face portions of the resonator than at the central portion thereof.

REFERENCES:
patent: 4523317 (1985-06-01), Botez
patent: 4546480 (1985-10-01), Buruham et al.
patent: 4546481 (1985-10-01), Yamamoto et al.
patent: 4813050 (1989-03-01), Shima et al.
patent: 4815082 (1989-03-01), Isshiki et al.
patent: 5018158 (1991-05-01), Okada et al.
patent: 5450437 (1995-09-01), Shim et al.
Paper C131, Proceedings of the 1991 IEICE Fall Conference, Sep. 5-8, 1991, Tokyo, Japan.

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