Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-11-10
1996-04-09
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 22, 257432, 257436, H01L 2906, H01L 310328, H01L 310336
Patent
active
055064191
ABSTRACT:
Quantum well infrared photodetectors (QWIPs) according to the invention have a surface that provides pseudo-random reflection of the radiation that is incident thereon, resulting in an increase in the effective number of passes of the radiation through the quantum well region, and hence in increased responsivity of the QWIPs, as compared to corresponding prior art grating QWIPs. A convenient approach to forming the pseudo-random reflecting surface is disclosed.
REFERENCES:
patent: 5272356 (1993-12-01), Wen et al.
patent: 5282902 (1994-02-01), Matsuyama
Levine Barry F.
Sarusi Gabby
AT&T Corp.
Harman John M.
Mintel William
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