Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-04-14
1994-12-20
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, 257 12, 257 9, H01L 29225
Patent
active
053748310
ABSTRACT:
A phonon modulator which includes a semiconductor body having at least first and second polar semiconductor quantum wells formed therein separated by a polar semiconductor barrier. The conduction band energies of the wells and barrier are selected such that the lowest energy electronic states in the two wells are separated by an energy which is greater than the energies of optical phonons in the well and barrier materials. Respective voltages are applied to the wells which are less than the optical phonon emission threshold in the well and barrier materials to generate respective currents therein. Increasing the voltage to the first well to a level in excess of such optical phonon emission threshold causes optical phonons to be emitted from the first well to create a standing interface mode from the first well through the barrier to the second well, thereby providing a scattering mechanism for electrons in the second well and reducing the current thereof.
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Dutta Mitra
Iafrate Gerald J.
Kim Ki W.
Stroscio Michael A.
Anderson William H.
Guay John F.
Jackson Jerome
The United States of America as represented by the Secretary of
Zelenka Michael
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