Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-06-08
1998-09-22
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
385 3, 385130, 332146, G02F 1015
Patent
active
058118306
ABSTRACT:
The present invention is achieved by layering a dielectric slab between a ground plane and a two dimensional quasi quantum well heterostructure and by switching between an unbiased state and a negative potential which is established between the quantum well heterostructure and the ground plane. In the unbiased state, the device supports wave propagation in the dielectric with a phase velocity similar to that of a wave propagating in a parallel plate waveguide. Upon application of the bias voltage, that is establishing a negative potential difference between contacts based on either side of the quantum well heterostructure, the conductivity of the quantum well decreases. Therefore, as the carrier wave propagates the wave interacts with a boundary similar to that of a dielectric-air interface. This new boundary condition, in turn, produces a faster phase velocity. Hence, toggling the bias modulates the quantum well conductivity which changes the phase velocity of the carrier wave.
REFERENCES:
patent: 4806998 (1989-02-01), Vinter et al.
Ramo et al, "Fields and Waves in Communication Electronics", Wiley and So New York, 1984; pp. 375-376.
Koul et al, "Microwave and Millimeter Wave Phase Shifters", Artech House, Norwood, Massachusetts, vol. 1, 1991, pp. 73-89.
Cui Hong Liang
Dubey Madan
Hechtman Charles D.
Horing Norman J.
McLane George F.
Guay John
Jackson Jerome
Tereschuk George B.
The United States of America as represented by the Secretary of
Zelenka Michael
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