Quantum well optical device on silicon

Details Quantum well optical device on silicon Quantum well optical device on silicon

1989-06-06

1991-12-24

Hille, Rolf

Coherent light generators

Particular component circuitry

Optical pumping

357 4, 357 16, 372 43, 372 45, H01L 3300

Patent

active

050757431

ABSTRACT:
A semiconductor structure for use in forming optical devices, such as lasers and LEDs, is disclosed. The structure includes a silicon base on which is formed by epitaxial growth, a crystalline material (such as AlGaP) structure or region that is nearly lattice matched to silicon. One or more quantum wells are formed in the crystalline material structure. A quantum well can be made of a direct bandgap material or an indirect bandgap material with isoelectronic centers (IECs). The regions on either side of the quantum wells can be graded to form a graded index separate confinement heterostructure (GRINSCH). To reduce problems of warpage, the crystalline material can be epitaxially grown in windows formed in a layer of silicon nitride or silicon dioxide on the silicon substrate. A multi-color array of optical devices can be provided with this structure.

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