Quantum well optical device

Coherent light generators – Particular active media – Semiconductor

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372 45, H01S 319

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active

051877155

ABSTRACT:
A quantum well optical device including a layer of semiconducting material of large forbidden band width and, situated in this layer, at least one quantum well, such as a quantum line or quantum hole, of a material having a narrower forbidden band than that of the layer. This quantum well has two permitted electron levels. Means exist of assuring the electron population of the first permitted energy level.

REFERENCES:
patent: 4849986 (1989-07-01), Boesner et al.
Masahiro Asada et al., "Gain and the Threshold of Three-Dimensional Quantum-Box Lasers", IEEE Journal of Quantum Electronics, vol. No. 9, Sep. 1986, pp. 1915-1921.
Optical Engineering, vol. 26, No. 5, May 1987, pp. 368-372, D. A. B. Miller, "Quantum Wells for Optical Information Processing".
Electronics Letters, vol. 25, No. 16, Aug. 3, 1989, pp. 1063-1065, E. Rosencher et al., "Second Harmonic Generation by Intersub-Band Transitions in Compositionally Asymmetrical MQWs".

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