Quantum-well memory device and method for making the same

Details Quantum-well memory device and method for making the same Quantum-well memory device and method for making the same

2006-01-03

2006-01-03

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000, C257S020000

Reexamination Certificate

active

06982434

ABSTRACT:
A quantum-well memory device and method is provided. The quantum-well memory device includes a substrate with two junctions. A sandwiched gate insulator is formed on top of the substrate and extended in length between the two junctions. The sandwiched gate insulator has a top layer, a middle layer, and a bottom layer. The middle layer is more soluble to an acid etch than the top and the bottom layer of the gate insulator. Polysilicon inserts are defined at the undercuts formed by selectively and self-limitedly etching the sidewalls of the middle layer of the gate insulator. The polysilicon inserts are positioned beside the middle layer and between the top layer and the bottom layer of the gate insulator. A method for fabricating such a device is also described.

REFERENCES:
patent: 6169308 (2001-01-01), Sunami et al.
patent: 6555839 (2003-04-01), Fitzgerald
patent: 6620664 (2003-09-01), Ma et al.

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