Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-04-19
2008-11-25
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045011, C372S096000
Reexamination Certificate
active
07457338
ABSTRACT:
In accordance with the present invention, GaAs-based optoelectronic devices have an active region that includes a well layer composed of a compressively-strained semiconductor that is free, or substantially free, of nitrogen disposed between two barrier layers composed of a nitrogen- and indium-containing semiconductor.
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Mawst Luke J.
Tansu Nelson
Yeh Jeng-Ya
Foley & Lardner LLP
Harvey Minsun
Niu Xnning
Wisconsin Alumni Research Foundation
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