Quantum well laser with a composition-graded interface at the qu

Details Quantum well laser with a composition-graded interface at the qu Quantum well laser with a composition-graded interface at the qu

1998-03-17

2000-07-18

Sanghavi, Hemang

Coherent light generators

Particular active media

Semiconductor

372 43, 372 46, H01S 319

Patent

active

060917520

ABSTRACT:
Quantum well lasers are herein made with purposely-graded interfaces which control the interdiffusion of atoms during high temperature processing. The result is a predictably-graded, large interface between the quantum well and the waveguide layers to either side thereof. The process is highly controllable and produces unique structures which exhibit surprisingly high power in a repeatable manner.

REFERENCES:
patent: 4916708 (1990-04-01), Hayakawa
patent: 5327445 (1994-07-01), Matsumoto et al.
patent: 5381434 (1995-01-01), Bhat et al.

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