Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1998-03-31
2000-04-25
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 11, 257 21, 257189, 257432, 257459, H01L 2906, H01L 2912, H01L 310232
Patent
active
060547189
ABSTRACT:
An infrared photocathode comprises an infrared radiation absorbing structure based on multiple quantum well (MQW) material on top of an electron conducting contact layer having a negative electron affinity back surface. In the first photocathode, a top contact layer is etched to form a transmissive diffraction grating to aid photon absorption in the MQW material. In the second photocathode, a plurality of spaced apart MQW structures form a diffraction grating which aids photon absorption in the MQW material.
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Claiborne Lewis T.
Dodd Mark A.
Lockheed Martin Corporation
Tran Minh Loan
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