Quantum well infrared filter

Details Quantum well infrared filter Quantum well infrared filter

1994-08-12

1996-08-06

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 359890, 359248, H01L 29161, H01L 29205

Patent

active

055436285

ABSTRACT:
A controllable infrared filter (22) includes a quantum well filter unit (24) operable to absorb infrared energy at a selected wavelength. The quantum well filter unit (24) has a quantum well layer (26) made of an infrared transparent semiconductor mate rial and a barrier layer (28, 32) of another infrared transparent semiconductor material epitaxially deposited on each side of the quantum well layer (26). There is structure for controllably introducing charge carriers into the quantum well layer (26), which may utilize a source of electrons from other semi conductor layers (36, 38) and an applied voltage, or may utilize a laser (76) that generates charge carriers in the quantum well layer (26). The filter (22) further includes a lens (44, 46) or other optical system for directing infrared radiation through the first barrier layer (28), the quantum well layer (24), and the second barrier layer (32). Fixed band pass optical filters may be used in conjunction with the controllable quantum well filters.

REFERENCES:
patent: 4891815 (1990-01-01), Ragle et al.
patent: 4903101 (1990-02-01), Maserjain
patent: 5384469 (1995-01-01), Choi

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