Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-07-17
2000-02-22
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 80, 257 84, 257 85, 257432, 257460, H01L 2906, H01L 2715
Patent
active
060283238
ABSTRACT:
A method for infrared (IR) imaging using a panel made of integrated GaAs quantum well infrared photodetector (QWIP) and near-infrared (NIR) or visible light emitting diode (LED). The panel is a large area diode with an optical window for top illumination or without the window for backside illumination. The integrated device acts as a photon energy up-converter which converts infrared light of wavelength longer than about 1.1 .mu.m to near infrared or visible light which falls into the silicon detector spectral range. Using this device, an IR image is up-converted and the resulting NIR or visible image is then detected by an off-the-shelf silicon charge-coupled-device (CCD) camera The image detected on the CCD camera represents the original infrared image. A specific device embodiment for converting 9 .mu.m IR to 870 nm NIR is given. Using this up-conversion scheme a multicolor or multispectral version is easily realized, which provides the capability of simultaneously imaging in several infrared wavelength regions. The imaging panel can also be used with other forms of photodetectors.
REFERENCES:
Integrated quantum well intersub-band photodetector and light emitting diode, H.C. Liu; J. Li; Z.R. Wasilewski; M. Buchanan. Electronics Letters, May 11, 1995 vol. 31, No. 10, p. 832-833.
Pixelless infrared imaging device. H.C. Liu; L.B. Allard; M. Buchanan; Z.R. Wasilewski Electronics Letters, Feb. 27, 1997 vol. 33, No. 5. p. 379-380.
Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with alight emitting diode. L B. Allard; H.C. Liu; M. Buchanan; Z.R. Wasilewski. App. Phy. Lett. 70(21), May 26, 1997.
Infrared Technology XXI.. H.C. Liu J. Li; Z.R. Wasilewski; M. Buchanan. Society of Photo-Optical Instrumentation Engineers Jul. 9-13, 1995, San Diego, California.
Photodetectors; Materials and Devices II. Society of Photo-Optical Instrumentaion Engineers Feb. 12-14, 1997, San Jose, California.
National Research Council of Canada
Tran Minh Loan
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