Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-12-08
1996-05-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 22, 257 23, 257 25, 359248, H01L 2906, H01L 310328, H01L 310336
Patent
active
055213987
ABSTRACT:
An optical operator designed to be subjected to write radiation for processing read radiation that it receives, the operator comprising an electro-optical material (Q2), first and second materials (Q1, Q3) distributed on either side of the electro-optical material (Q2), said first and second materials (Q1, Q3) being collection quantum wells. Quantum barrier forming materials (6, 8) are interposed between said two materials (Q1, Q3) and the electro-optical material (Q2), with one of the quantum barrier forming materials (6) constituting a filter such that charges of a certain sign photoexcited by the write radiation in a material (4, Q1) on one side of said filter pass through it in the absence of an external electric field to relax in the collection quantum well (Q3) situated on the other side of the filter (6), while charges of opposite sign are blocked by the filter (6) in the other collection well (Q1).
REFERENCES:
patent: 4796067 (1989-01-01), Shimizu et al.
Paton et al., "A Novel Asymmetrically Coupled Quantum Well Infrared Modulator," Superlattices and Microstructures, vol. 4, No. 6, 1988, pp. 737-739.
Sommers et al., "Variably Spaced Superlattice Energy Filter, a New Device Design Concept for High-Energy Electron Injection," Appl. Phys. Lett. 48 (12), 24 Mar. 1986, pp. 806-808.
Journal of the Optical Society of America, vol. 7, No. 11, Nov. 1990, New York, US, pp. 2217-2225.
Applied Physics Letters, vol. 59, No. 7000, Oct. 1991, New York, US, pp. 1832-1834.
Deveaud-Pledran Benoit
Gerard Jean-Michel
Gravey Philippe
Pelekanos Nikolaos
France Telecom
Mintel William
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