Quantum well electro-optical modulator

Details Quantum well electro-optical modulator Quantum well electro-optical modulator

1997-04-28

1999-07-06

Epps, Georgia

Optical: systems and elements

Optical modulator

Light wave temporal modulation

G02F 103

Patent

active

059204192

ABSTRACT:
In order to operate at high frequencies and at high optical powers without reducing the possible depth of modulation, a quantum well electro-optical modulator has a semiconductor structure of III-V elements including, in succession, an n doped layer, an undoped layer, a quantum well active layer and a p doped layer. Applications include optical transmission systems.

REFERENCES:
patent: 5105301 (1992-04-01), Campi
I. Kotaka et al, "High-Speed InGaAs/InA1As Multiple-Quantum-Well Optical Modulator", Electronics and Communications in Japan, Part 2(Electronics) Jun. 1992, vol. 75, No. 6, pp. 24-31.
T. H. Wood,"Multiple quantum well (MQW) waveguide modulators", Journal of Lightwave Technology, vol. 6, No. 6, pp. 743-757 Jun. 1988.

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