Coherent light generators – Particular active media – Semiconductor
Patent
1992-05-08
1993-10-05
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
437129, H01S 319
Patent
active
052512258
ABSTRACT:
A GaInAsSb quantum-well laser for highly efficient conversion of input energy to output infrared light is described. The laser consists of an MBE grown active region formed of a plurality of GaInAsSb quantum-well layers separated by AlGaAsSb barrier layers. The active region is sandwiched between AlGaAsSb cladding layers in which the Al content is greater than the Al content in the barrier layers.
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Choi Hong K.
Eglash Stephen J.
Epps Georgia Y.
Massachusetts Institute of Technology
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