Quantum well device with control of spontaneous photon emission,

Coherent light generators – Particular component circuitry – Optical pumping

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357 17, 372 47, H01L 29161, H01L 29205, H01L 2964

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050898604

ABSTRACT:
In the present invention, spontaneous photon emission intensity in a semiconductor quantum well is strongly influenced by a highly reflecting interface, with the quantum well to interface spacing being less than the optical emission wavelength of the quantum well. An enhancement/inhibition ratio on the order of 10 is possible according to the present invention using a single reflector, and enhancement/inhibition ratios on the order of 1000 are possible when two reflectors are used in the quantum well light-emitting diode structures. In addition, according to the present invention, the gain, directionality, and efficiency of a vertical cavity surface-emitting laser can also be greatly improved. A method of making a device according to the present invention is also presented.

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