Quantum well device for producing localized electron states for

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 17, 257 21, H01L 2712

Patent

active

053110099

ABSTRACT:
In accordance with the invention, a quantum well device provides localized states for electrons having an energy E greater than the barrier height of the constituent quantum wells. The device comprises a confinement quantum well of width L.sub.w equal to an integer number n of deBroglie half wavelengths ##EQU1## and a plurality of adjacent quarter wavelength barriers and wells, each having a thickness equal to an odd number m of deBroglie quarter wavelengths. Constructive interference between the waves partially reflected by the interfaces between adjacent .lambda./4 barriers and .lambda./4 wells leads to the formation of a localized electron state at an energy E in the region of the confinement well. The device can be used in detectors and modulators employing transitions between a bound state within the well and the localized state above the well.

REFERENCES:
patent: 4894526 (1990-01-01), Bethea et al.
patent: 5023685 (1991-06-01), Bethea et al.
patent: 5036371 (1991-07-01), Schwartz
patent: 5068867 (1991-11-01), Hasenberg et al.
patent: 5091756 (1992-02-01), Iga et al.
patent: 5105301 (1992-04-01), Campi
patent: 5126553 (1992-06-01), England et al.
patent: 5142341 (1992-08-01), Goronkin et al.
patent: 5185647 (1993-02-01), Vasquez
patent: 5187553 (1993-02-01), Makita
K. Kishino, et al. "Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GalnP/AllnP visible Lasers", Appl. Phys. Lett., vol. 58, pp. 1822-1824 (1991). Jan. 31, 1991.
T. Takagi, et al. "Electron-wave reflection by multi-quantum barrier in n-GaAs/i-AlGaAs
-GaAs tunneling diode", Appl. Phys. Lett., vol. 59, pp. 2877-2879 (1991). Sep. 4, 1991.
T. Takagi, et al. "Design and Photoluminescence Study on a Multiquantum Barrier", IEEE J. of Quantum Electronics, vol. 27, No. 6, pp. 1511-1519 (1991) Jun. 6, 1991.
G. Lenzi, et al. "Bragg confinement of carriers in a quantum barrier", Appl. Phys. Lett., vol. 56, pp. 871-873 (1990). Feb. 26, 1990.
J. Salzman, et al. "Bragg confinement of carriers in a shallow quantum well", Appl,. Phys. Lett., vol. 59, pp. 1858-1860 (1991). Jul. 15, 1991.
K. Iga, et al., "Electron Reflectance of Multiquantum Barrier (MQB)", Electronics Letters, vol. 22, No. 19, pp. 1008-1010 (1986). Sep. 11, 1986.
R. Dingle, et al. "Quantum States of Confined Carriers in Very Thin Al.sub.x Ga.sub.1-x As-GaAs-Al.sub.x Ga.sub.1-x As Heterostructures", Physical Review Letters, vol. 33, No. 14, pp. 827-830 (1974) Sep. 30, 1974.
L. Esaki, et al. "New Transport Phenomenon in a Semiconductor `Superlattice`", Physical Review Letters, vol. 33, No. 8, pp. 495-498 (1974) Aug. 19, 1974.
F. H. Stillinger, et al. "Bound states in the continuum", Physical Review A, vol. 11, No. 2, pp. 446-454 (1975). Feb. 1975.
D. R. Herrick, "Construction of Bound States in the Continuum for Epitaxial Heterostructure Superlattices", Physica, vol. 85B, pp. 44-50 (1977).
F. H. Stillinger, "Potentials Supporting Positive-Energy Eigenstates and Their Application to Semiconductor Heterostructures", Physica, vol. 85B, pp. 170-276 (1977).
T. Takagi, et al. "Potential Barrier Height Analysis of AlGaInP Multi-Quantum Barrier (MQB)", Japanese Journal of Applied Physics, vol. 29, No. 11, pp. L1977-L1980 (1990) Nov. 11, 1990.
J. Weidmann, "Zur Spektraltheorie von Sturm-Liouville-Operatoren" Math, Zeitschr, vol. 98, pp. 268-302 (1967).
F. H. Stillinger, et al. "Role of electron correlation in determining the binding limit for two-electron atoms", Physical Review A, vol. 10, No. 4, pp. 1122-1130 (1974). Oct. 1974.
B. Simon, "On Positive Eigenvalues of One-Body Schrodinger Operators", Comm. on Pure and Applied Math., vol. XXII, pp. 531-538 (1967).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Quantum well device for producing localized electron states for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Quantum well device for producing localized electron states for , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum well device for producing localized electron states for will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2413734

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.