Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-09-09
1997-10-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, 257436, 385 37, 2503384, H01L 2906, H01L 310328, H01L 310336, H01L 31072
Patent
active
056775440
ABSTRACT:
Quantum well detector, in which the active detection zone (2) occupies only a limited area of the device and in which a diffraction grid (5) having a larger surface area than this zone thereby makes it possible to couple to it a greater light flow than that corresponding to the surface area of this zone. In this way, the sensitivity of the device is increased.
Application: Detection of optical radiation.
REFERENCES:
patent: 5026148 (1991-06-01), Wen et al.
patent: 5075749 (1991-12-01), Chi et al.
patent: 5272356 (1993-12-01), Wen et al.
Bois Philippe
Duboz Jean-Yves
Luc Fran.cedilla.ois
"Thomson-CSF"
Crane Sara W.
Wille Douglas
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