Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-10-02
2008-12-09
Purvis, Sue A (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S015000, C257S016000, C257S017000, C257S018000, C257S020000, C257SE33008
Reexamination Certificate
active
07462859
ABSTRACT:
A spin coherent, single photon detector has a body of semiconductor material with a quantum well region formed in barrier material in the body. The body has a first electrode forming an isolation electrode for defining, when negatively energized, an extent of the quantum well in the body and a second electrode positioned above a location where an electrostatic quantum dot is defined in said quantum well when positively energized. The quantum well occurs in three layers of material: a central quantum well layer and two outer quantum well layers, the two outer quantum well layers having a relatively low conduction band minimum and the barrier having a relatively high conduction band minimum while the central quantum well layer having a conduction band minimum between the relatively high and relatively low conduction band minimums.
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Croke, III Edward T.
Gyure Mark F.
HRL Laboratories LLC
Ladas & Parry
Purvis Sue A
Valentine Jami M
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