Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-06-22
1993-08-03
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 24, 257 25, 257192, 257194, 307440, 307445, 307448, 307450, H01L 29161, H01L 2712, H01L 4500
Patent
active
052332055
ABSTRACT:
A novel concept and structure of a semiconductor circuit are disclosed which utilize the fact that the interaction between the carriers such as electrons and holes supplied in a meso-scopic region and the potential field formed in the meso-scopic region leads to such effects as quantum interference and resonance, with the result that the output intensity is changed.
REFERENCES:
patent: 4912531 (1990-03-01), Reed et al.
patent: 4942437 (1990-07-01), Fowler et al.
patent: 4969018 (1990-11-01), Reed
Reed, "The Quantum Transistor", pp. 275 to 281, May 1989, BYTE magazine.
Datta, et al., Proposed Structure for Large Quantum Interference Effects, Applied Physics Letter 48, Feb. 17, 1986, pp. 487-489.
Usagawa, Quantum Interference Effect on Low-Energy He Atomic Beam Scattering at the Surface of He II, Physics Letters, vol. 73A, No. 4, Oct. 1, 1979, pp. 339-342.
Ho Shirun
Takemura Yoshiaki
Usagawa Toshiyuki
Yamaguchi Ken
Hitachi , Ltd.
James Andrew J.
Ngo Ngan Van
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