Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-10-16
2007-10-16
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S009000, C257SE49001, C977S932000
Reexamination Certificate
active
10482351
ABSTRACT:
A quantum supermemory is based on the cells of nanostructured material. The nanostructured material includes consists of clusters with tunnel-transparent coatings. The clusters have sizes at which resonant electron features are manifested. The size is determined by the circular radius of the electronic wave, according to the formula r0=/(meα2c)=7.2517 nm, whereis the Plank contstant, meis the electron mass, α=1/137,036 is the fine structure constant, c is the speed of light. The cluster size is set within the range r0=4r0, and the width of the tunnel-transparent gap is less than r0=7.2517 nm. The nanostructured material stores energy (charge) uniformly along its whole volume with the specific density of 1.66*103J/cm3. Based on this material energy-independent rewritable memory is obtained with the writing density up to 28 Gbyte/cm2, the maximum working temperature being 878° C. and the maximum timing frequency being 175 Ghz.
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Baumeister B. William
Brooks & Kushman P.C.
Reames Matthew L.
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