Quantum semiconductor device that uses a quantum point contact f

Details Quantum semiconductor device that uses a quantum point contact f Quantum semiconductor device that uses a quantum point contact f

1992-06-03

1994-01-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 14, 257 29, 257195, 257472, H01L 2712, H01L 4500

Patent

active

052801810

ABSTRACT:
A quantum semiconductor device comprises a channel region formed with a two-dimensional carrier gas, a Schottky electrode structure provided on the channel region for creating a depletion region in the channel region to extend in a lateral direction such that the two-dimensional carrier gas is divided into a first region and a second region, a quantum point contact formed in the depletion region to connect the first and second regions of the two-dimensional carrier gas in a longitudinal direction, an emitter electrode provided on the channel region in correspondence to the first region of the two-dimensional carrier gas, one or more collector electrodes provided on the channel region in correspondence to the second region of the two-dimensional carrier gas, and another Schottky electrode structure provided in correspondence to the first region for creating a depletion region therein such that a path of the carriers entering into the quantum point contact is controlled asymmetrical with respect to a hypothetical longitudinal axis that passes through the quantum point contact in the longitudinal direction.

REFERENCES:
patent: 4962410 (1990-10-01), Kriman et al.
patent: 4996570 (1991-02-01), Van Houten et al.
patent: 5051791 (1991-09-01), Baldwin et al.
van Wees, "Quantized Conductance of Point Contacts in a 2-Dimensional Electron Gas", Phys. Rev. Lett., vol. 60, #9, Feb. 29, 1988, pp. 848-850.
Spector et al., "Refractive Switch for Two-Dimensional Electrons", App. Phys. Lett., vol. 56, #24, Jun. 11, 1990, pp. 2433-2435.
Okada et al., Superlattices and Microstructures, vol. 10, No. 4, 1991 "Angular Distribution of Electrons Injected Through a Quantum Point Contact".
Patent Abstracts of Japan, vol. 14, No. 170 (E-913) Mar. 30, 1990 & JP-A-20 27 739 (NIT) Jan. 30, 1990, Abstract.

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