Quantum semiconductor device employing quantum boxes for enablin

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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257 20, 257 27, 257197, H01L 2906, H01L 2980, H01L 2726

Patent

active

052834450

ABSTRACT:
A quantum semiconductor device has a semiconductor substrate, a plurality of quantum boxes formed adjacent to one another in the semiconductor substrate, and a quantum level control unit for changing the effective size of at least one of the quantum boxes, to thereby change the quantum level of each of the quantum boxes. Consequently, according to the present invention, an influence of charges due to peripheral impurities is small, and thereby a compact quantum semiconductor device can be provided. Further, according to the present invention, a highly integrated high-speed switching circuit can be provided.

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patent: 5170226 (1992-12-01), Fukuzawa et al.
patent: 5198879 (1993-03-01), Ohshima

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