Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-11-24
1994-02-01
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 27, 257197, H01L 2906, H01L 2980, H01L 2726
Patent
active
052834450
ABSTRACT:
A quantum semiconductor device has a semiconductor substrate, a plurality of quantum boxes formed adjacent to one another in the semiconductor substrate, and a quantum level control unit for changing the effective size of at least one of the quantum boxes, to thereby change the quantum level of each of the quantum boxes. Consequently, according to the present invention, an influence of charges due to peripheral impurities is small, and thereby a compact quantum semiconductor device can be provided. Further, according to the present invention, a highly integrated high-speed switching circuit can be provided.
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Fujitsu Limited
Mintel William
Saadat Mahshid
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