Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-10-23
2007-10-23
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S194000
Reexamination Certificate
active
10781684
ABSTRACT:
The quantum semiconductor device comprises a first semiconductor layer18on a substrate10with a two-dimensional carrier gas formed in; a quantum dot20formed on the first semiconductor layer18; a second semiconductor layer22formed on the first semiconductor layer18, covering the quantum dot20; a dot-shaped structure24formed on the surface of the second semiconductor layer22at the position above the quantum dot20; and an oxide layer26a, 26bformed on the surface of the second semiconductor layer22on both sides of the dot-shaped structure24. The crystal strains generated in the surface of the semiconductor layer22due to the presence of the quantum dot20causes the dot-shaped structure24to grow on the semiconductor layer22surface at the position which is accurately above the quantum dot20. This permits the oxide layer26a, 26bto be formed with the dot-shaped structure24as a mark, and the source/drain regions30a, 30bcan be formed with the oxide layer26a, 26bas a mark. Thus, even in a case that the self-assembled fine quantum dot20is buried in the semiconductor layer22, the quantum semiconductor device can be formed without failure.
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Dickey Thomas L.
Fujitsu Limited
Kratz, Quintos & Hanson, LLP.
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