Quantum semiconductor device and a fabrication process thereof

Details Quantum semiconductor device and a fabrication process thereof Quantum semiconductor device and a fabrication process thereof

1997-04-08

1999-07-13

Niebling, John F.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438735, 438911, H01L 21302

Patent

active

059226218

ABSTRACT:
A method for fabricating a quantum semiconductor device includes the steps of forming an etch pit of a triangular pyramid on a {111}A-oriented principal surface of a substrate having zinc blende structure by a dry etching process, and depositing semiconductor layers forming a quantum structure consecutively on the etch pit.

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Petroff, P.M. et al., Appl. Phys. Lett. 41(7), Oct. 1, 1982, pp. 635-638.
Temkin, H. et al., Appl. Phys. Lett. 50(7), Feb. 16, 1987, pp. 413-415.
Asai, H., et al., Appl. Phys. Lett. 51(19), Nov. 9, 1987, pp. 1518-1520.
Fukui et al., Appl. Phys. Lett. 58(18), May 6, 1991, pp. 2018-2020.
Kapon et al., Appl. Phys. Lett. 50(6), Feb. 9, 1987, pp. 347-349.

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