Quantum photonic imagers and methods of fabrication thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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C257S009000, C257S014000, C257S085000, C257S090000, C257S094000, C257S252000, C257S257000, C257SE27135, C257SE27138, C257SE33008, C345S046000, C345S048000, C345S215000, C353S038000, C362S551000, C362S552000, C362S553000, C438S022000, C438S024000, C438S048000, C438S223000, C438S224000, C438S225000, C438S226000, C438S227000, C438S228000

Reexamination Certificate

active

08049231

ABSTRACT:
Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

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