Quantum optical semiconductor device

Details Quantum optical semiconductor device Quantum optical semiconductor device

2006-03-21

2006-03-21

Pham, Hoai (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C438S962000

Reexamination Certificate

active

07015498

ABSTRACT:
A quantum semiconductor device including quantum dots formed by S-K growth process taking place in a heteroepitaxial system wherein the relationship between the energy level of light holes and the energy level of heavy holes in the valence band is changed by optimizing the in-plane strain and the vertical strain accumulated in a quantum dot.

REFERENCES:
patent: 6751243 (2004-06-01), Mukai
patent: 2002/0119680 (2002-08-01), Wang et al.
patent: 2002/0162995 (2002-11-01), Petroff et al.
patent: 9-326506 (1997-12-01), None
D. Leonard et al.; “Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces”;Applied Physics Letters; vol. 63; No. 23; Dec. 6, 1993; pp. 3203-3205./Discussed in the specification.
K. Mukai et al.; “Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 μm”;Japanese Journal of Applied Physics'vol. 33; Part 2, No. 12A; Dec. 1, 1994; pp. L1710-L1712./Discussed in the specification.
J. Oshinowo et al.; “Highly uniform InGaAs/GaAs quantum dots (˜15 nm) by metalorganic chemical vapor deposition”;Applied Physics Letters; vol. 65; No. 11; Sep. 12, 1994; pp. 1421-1423./Discussed in the specification.

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