Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-07-26
1995-05-09
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 22, 257 23, 257 24, 257 27, 257192, H01L 29205, H01L 2988, H01L 29772
Patent
active
054142741
ABSTRACT:
A quantum multifunction transistor including a plurality of conduction layers of semiconductor material with a tunnel barrier layer sandwiched therebetween. The conduction layers each being very thin to form discrete energy levels, and the material being chosen so that discrete energy levels therein are not aligned across the tunnel barrier layer in an equilibrium state. A gate coupled to a portion of one of the conduction layers for aligning, in response to a voltage applied thereto, discrete energy levels in the conduction layers across the tunnel barrier layer, whereby majority carrier current flows through the transistor. Application of a higher voltage to the gate results in minority carrier current flow through the transistor.
REFERENCES:
patent: 5113231 (1992-05-01), Soderstrom
patent: 5159421 (1992-10-01), Wolff
Goronkin Herbert
Shen Jun
Tehrani Saied N.
Zhu Xiaodong T.
Jackson Jerome
Motorola Inc.
Parsons Eugene A.
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