Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-05-09
2006-05-09
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S183000
Reexamination Certificate
active
07042002
ABSTRACT:
A quantum memory includes memory cells each comprising a physical system ensemble, quantum information of the physical system ensemble being expressed by a quantum state of whole amount of the total angular momentum of the physical systems, and the memory cells including two storage memory cells storing the quantum state and a transfer memory cell transferring the quantum state, only two of the memory cells being present on a straight line. The quantum memory also includes a magnet applying a magnetic field to the two storage memory cells and the transfer memory cell, a first light source irradiating the two storage memory cells and the transfer memory cell with right-handed or left-handed polarized light, a second light source simultaneously irradiating one of the two storage memory cells and the transfer memory cell with a laser beam, and a detector detecting a polarization state of the laser beam.
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Ichimura Kouichi
Shiokawa Noritsugu
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Ngo Ngan V.
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