Quantum memory and information processing method using the same

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257S183000

Reexamination Certificate

active

06849863

ABSTRACT:
A quantum memory includes memory cells each comprising a physical system ensemble, quantum information of the physical system ensemble being expressed by a quantum state of whole amount of the total angular momentum of the physical systems, and the memory cells including two storage memory cells storing the quantum state and a transfer memory cell transferring the quantum state, only two of the memory cells being present on a straight line. The quantum memory also includes a magnet applying a magnetic field to the two storage memory cells and the transfer memory cell, a first light source irradiating the two storage memory cells and the transfer memory cell with right-handed or left-handed polarized light, a second light source simultaneously irradiating one of the two storage memory cells and the transfer memory cell with a laser beam, and a detector detecting a polarization state of the laser beam.

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Duan et al.; “Quantum Communication Between Atomic Ensembles Using Coherent Light”; The American Physical Society, Physical Review Letters, vol. 85, No. 26, pp. 5643-5646, (2000).
Julsgaard et al.; “Experimental Long-Lived Entanglement of TWA Macroscopic Objects”; Nature, vol. 413, No. 27, pp. 400-403, (2001).

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