Quantum memory

Details Quantum memory Quantum memory

1995-04-18

1997-09-02

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257 22, 257 25, 365174, H01L 2906, H01L 310328, H01L 310336

Patent

active

056635710

ABSTRACT:
A quantum memory has memory cells, each of the memory cells includes three-stage quantum dots stacked in sequence. A memory cell array is constructed by two-dimensionally arranging the memory cells. The quantum dots are made of heterojunctions of compound semiconductors. Writing and reading to and from a memory cell are executed by bringing a needle electrode close to the memory cell to apply an external electric field while irradiating laser light to an area including the memory cell.

REFERENCES:
patent: 5073893 (1991-12-01), Kondou
patent: 5229170 (1993-07-01), Narusawa
patent: 5347140 (1994-09-01), Hirai et al.
patent: 5436754 (1995-07-01), Ishihara et al.
patent: 5440148 (1995-08-01), Nomoto

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