Quantum mechanical semiconductor device with electron/hole diffr

Details Quantum mechanical semiconductor device with electron/hole diffr Quantum mechanical semiconductor device with electron/hole diffr

1991-07-18

1993-03-02

Berman, Jack I.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Non-heterojunction superlattice

257 26, 257 29, 250396R, H01L 2980

Patent

active

051912163

ABSTRACT:
A solid state, quantum mechanical electron/hole wave device in the form of a switch or multiplexor includes a layer of semiconductor material supporting substantially ballistic electron/hole transport and a periodic grating structure formed in the layer of semiconductor material, with the grating structure comprising a modulation in electron/hole potential energy and/or effective mass. Preferably, means are provided for applying and varying the grating modulation. By constructing the device to divide the input substantially completely into two output beams (to operate in the Bragg regime), a useful switch is provided. Likewise, by constructing the device to divide the input into a selected number of three or more output beams (to operate in the Raman-Nath regime), a useful multiplexor is provided.

REFERENCES:
patent: 4962410 (1990-10-01), Kriman et al.
patent: 5051791 (1991-09-01), Baldwin et al.

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