Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-08-02
2005-08-02
Zarneke, David (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S012000, C257S015000, C257S017000, C257S021000, C257S025000, C257S031000
Reexamination Certificate
active
06924501
ABSTRACT:
A quantum logic gate utilizes an inter-polarization (dipole-dipole) interaction between excitons having polarization in semiconductor quantum well structures, or a spin exchange interaction between spin polarized excitons in the semiconductor quantum well structures. Problems associated with conventional semiconductor quantum well structures are solved in that a phase relaxation time is very short because of using inter-subband electrons, and that there is no usable ultrashort optical pulse laser technology because a subband transition wavelength is in a far-infrared region and hence ultra fast control is impossible.
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Menz Doug
National Institute of Advanced Industrial Science and Technology
Venable LLP
Voorhees Catherine M.
Zarneke David
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