Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-12-18
1998-06-16
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 94, H01L 3300
Patent
active
057675350
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND AND SUMMARY OF THE INVENTION
1. Technical Field
The present invention is related to quantum layer structures, in particular for lasers or detectors, having at least four semiconductor layers. Internal layers are disposed between two outer barrier layers.
The quantum layer structures are composed of layers of different compounds, the respective emission or absorption wavelengths of which are larger due to the invented coating than the respective emission or absorption wavelengths of the compounds themselves. Application of the invented quantum layer structures onto gallium arsenide substrates makes wavelengths of 1.3 .mu.m or more possible. Using InP substrates makes wavelengths in a range of approximately 2 .mu.m and 5 .mu.m possible. Suitable for use are quantum layer structures such as, by way of illustration, semiconductor injection lasers, modulators and detectors, in particular also photovoltaic detectors (see, e.g., Y: Sugiyama et al., J. Cryst. Growth, 95, 1989, pp 263-366).
2. State of the Art
Examining the loss function of a fiber glass shows minimal losses at wavelengths of 1.3 .mu.m and 1.55 .mu.m. With regard to this see, for example, S. M. Sze, Physics of Semiconductor Devices, 2.sup.nd Edition (1981) , p. 704. The spectral range of 1.3 .mu.m is the international standardized wavelength range for the optical transmission of information via fiber glass transmission paths. It is to be expected that this spectral range dominating the large networks of nationally and internationally operating telephone companies will extend to private information consumers ("fiber to the home"). Optoelectronic components for this spectral range are, therefore, of particular technological importance.
Optoelectronic components such as, for instance, lasers, detectors and modulators for the spectral range of 1.3 .mu.m are without exception fabricated on indium phosphite substrates.
The medium wave infrared range (2-5 .mu.m) is of considerable technological significance for laser spectroscopic detection of trace gases in the atmosphere, because nearly all infrared active gases have more or less strong absorption bands in this wavelength range. This application is called "environmental monitoring". Today, lead salt laser diodes are utilized in this use. Even after 20 years of development, these components are still in poor technological condition. They have to be cooled to a low operating temperature, the mode spectrum is instable, and the reliability meets only very low technological application standards.
In order to achieve a wavelength range of 1.3 .mu.m, other substance combinations such as, for example, Ga.sub.x In.sub.1-x As.sub.y P1.sub.-y, GaAs.sub.x Sb.sub.1-x, InAs.sub.x P.sub.1-x, (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y As or In.sub.x Ga.sub.1-x As, with x and y being able to vary from 0 to 1, observing the respective fundamental band gaps and the most promising candidates with wavelengths corresponding thereto. However, the technology of these components is difficult and the technically desirable integration with complex electronic circuits on the same substrate could not be achieved despite considerable international research efforts.
The longest emission wavelength hitherto achieved with a laser on a gallium arsenide substrate is approximately 1.1 .mu.m. The active layer of this laser is a mechanically deformed quantum layer structure of gallium indium arsenide (P. K. York et al, Journal of Crystal Growth 107 (1991), 741). A notably longer emission wavelength cannot be achieved with this structure for essential reasons.
In the publication "Linewidth Enhancement Factor for GaInSb/GaSb lasers", A. N. Baranov, Appl. Phys. Lett. 59 (1991), 2360 a heterolaser structure is disclosed in which a band deformation, in which localized holes and electrons can recombine in a radiating manner, is achieved at a pn-junction due to laser operation. It is the band deformation that permits quantizing of respective electron or hole energies in the region of the band deformation. This means that there is no quanti
REFERENCES:
Japan Abstract No. 59-172785, vol. 9, No. 27 (E-294), Sep. 29, 1984.
Soviet Technical Physics Letters, 12(6), Jun. 1986, entitled "Quantum-well aser with a single heterojunction" by A.N. Baranov et al.
Applied Physics Letters, 61(16), Oct. 19, 1992, entitled "Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors" by M.C. Phillips et al.
Journal of Cyrstal Growth, 127, No. 1-4, Aug. 1993, entitled Gas source molecular beam epitaxy of alternated tensile/compressive strained GaInAsP multiple quantum wells emitting at 1.5 .mu.m by J-Y. Emery et al.
Applied Physics Letters, 59(19), Nov. 1991, entitled "Linewidth enchancement factor for GaInSbAs/GaSb lasers" by A.N. Baranov et al.
Conference on Lasers and Electro-Optics, (CLEO 1991) Technical Digest Series, vol. 10, May 12-17 1991, entitled "Monolayer thick GaAs-GaAsSb strained layer quantum well lasers" by J.H. Lee at al.
Applied Physics Letters, 60(25), entitled "Observation of laser emission in an InP-AllnAs type II superlattice" by E. Lugagne-Delpon et al.
Bachem Karl-Heinz
Fekete Dan
Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung
Meier Stephen
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