Quantum interference transistor

Details Quantum interference transistor Quantum interference transistor

1989-11-13

1996-03-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257 24, 257194, H02L 2980

Patent

active

054970156

ABSTRACT:
A semiconductor device using interference effects of electron waves passing through a multichannel, wherein the multichannel is formed by a Dirac-delta-doped layer. A method of manufacturing a semiconductor device comprising the steps of: selectively forming a region of a predetermined crystallographic orientation onto a semiconductor substrate; and alternately growing the first semiconductor layer and the second semiconductor layer whose electron affinity is smaller than that of the first semiconductor layer onto the region of the predetermined crystallographic orientation by a vapor-phase growth method so as to have a convex shape in a manner such that an area of an upper layer is smaller. A semiconductor device in which a channel portion comprising a zigzag fine line is provided between a source and a drain.

REFERENCES:
patent: 4550330 (1985-10-01), Fowler
patent: 4733282 (1988-03-01), Chang et al.
patent: 4780748 (1988-10-01), Cunningham et al.
patent: 4882609 (1989-11-01), Schubert et al.
patent: 4942438 (1990-07-01), Miyamoto
patent: 4977435 (1990-12-01), Yoshimura et al.

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