Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1991-04-26
1993-12-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257270, 257280, 257472, H01L 2980
Patent
active
052705579
ABSTRACT:
A quantum interference semiconductor device comprises a channel layer of a first semiconductor material, a carrier supplying layer of a second semiconductor material provided on the channel layer and whereby a two-dimensional carrier gas is formed in the channel layer along an upper major surface thereof, a source electrode provided on the carrier supplying layer for injecting carriers, a drain electrode provided on the carrier supplying layer and displaced from the source electrode in a first direction defining a region of the channel layer therebetween which collects the injected carriers after travelling through the carrier gas in the first direction and a gate electrode structure provided on the region of the carrier supplying layer and in Schottky contact therewith. The gate electrode structure includes first and second opposing Schottky electrodes spaced in a second direction transverse to the first direction from each other and defining a gap therebetween and producing corresponding depletion regions extending into the channel layer which interrupt the flow of carriers in the first direction through the two-dimensional gas. At least one isolated Schottky electrode is formed on the upper major surface of the carrier supplying layer in the gap and in Schottky contact therewith and forms a corresponding depletion region defining corresponding passageways for carriers moving in the form of a quantum mechanical wave at each of the opposite sides thereof, relative to the corresponding depletion regions of the first and second opposing Schottky electrodes. At least one conductor strip, corresponding to and electrically contacting the isolated Schottky electrode, extends along the upper major surface of the carrier supplying layer in spaced relationship therefrom. Separately controlled, individual control voltages are supplied to the respective Schottky electrodes.
REFERENCES:
patent: 4962410 (1990-10-01), Kriman et al.
patent: 4977435 (1990-12-01), Yoshimura et al.
patent: 4996570 (1991-02-01), Van Houten et al.
patent: 5051791 (1991-09-01), Baldwin et al.
Nakamura, K., et al., "Electron Focusing . . . " Appl. Phys. Lett; Jan. 22, 1990, pp. 385-386.
Crane Sara W.
Fujitsu Limited
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