Quantum interference semiconductor device

Details Quantum interference semiconductor device Quantum interference semiconductor device

1991-07-01

1993-09-21

Yusko, Donald J.

Electric lamp and discharge devices

Discharge devices having three or more electrodes

Discharge control electrode

313309, 313336, 313351, 257 10, H01J 130

Patent

active

052472230

ABSTRACT:
A quantum interference semiconductor device using the interference effect of electron waves has a cathode, an anode, and a gate which are mounted in a vacuum. An electron wave which is emitted from the cathode into the vacuum is divided into a plurality of electron waves and, subsequently, the plurality of electron waves are combined at the anode. Phase differences among the plurality of electron waves are controlled by the gate, thereby making the device operative.

REFERENCES:
patent: 5012153 (1991-04-01), Atkinson et al.
patent: 5070282 (1991-12-01), Epsztein
patent: 5079476 (1992-01-01), Kane
patent: 5142184 (1992-08-01), Kane
Article IEDM 86 A Novel Quantum Interference Translator (QUIT) with Extremely Low Power-Delay Product and Very high Transconductance pp. 76-79, Dec. 1986.
Japanese Laid Open Publication No. HEI 1-294336 Nov. 1989.

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