Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-05-12
1995-09-26
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257194, 257195, H01L 29161
Patent
active
054536278
ABSTRACT:
A quantum interference device has semiconductor heterojunctions laminated on a semiconductor substrate for forming a two-dimensional electron gas channel. On the semiconductor heterojunctions are formed a first, a second and a third electrode which, upon the application of a negative voltage, form a depletion region within the semiconductor heterojunctions, thereby making the resulting two-dimensional electron gas channel a quantum wire of a stub structure comprising an entrance and an exit for electron waves, and a stub formed between the entrance and the exit. The second and third electrodes each have a first side substantially parallel to a side of the first electrode. The second and third electrodes also have a second side parallel to each other's second side. On a site near the edge of said stub is provided a fourth electrode for defining the effective length of the stub by a voltage applied thereto.
REFERENCES:
patent: 4733283 (1988-03-01), Kuroda
patent: 4942437 (1990-07-01), Fowler et al.
patent: 5003360 (1991-03-01), Okada et al.
patent: 5157467 (1992-10-01), Fujii
patent: 5233205 (1993-08-01), Usagawa et al.
patent: 5270557 (1993-12-01), Schmidt
patent: 5285081 (1994-02-01), Ando
patent: 5332911 (1994-07-01), von Klitzing et al.
D. C. Miller et al, "Modulation of the Conductance of T-shaped Electron Waveguide Structures with a Remote Gate" Nanostructure Physics and Fabrication, 1989, pp. 165-174.
S. Bandyopadhyay et al, "A Novel Quantum Interference Transistor (QUIT) with Extremely Low Power-Delay Product and Very High Transconductance", Proceeding of IEDM, vol. 76, 1986, pp. 76-79.
Fernando Sols et al, "Theory for a Quantum Modulated Transistor", J. of Applied Physics, vol. 66, (8), 15 Oct. 1989, pp. 3892-3906.
Toshihiro Itoh et al, "Transport Properties of Ballistic Quantum Wire", Extended Abstract 1992 of International Conference on Solid State Devices and Materials, Tsukuba, 1992, pp. 753-755.
Kimihisa Aihara et al, "Three-terminal operation of a Quantum Interference Device Using . . . ", IEDM, 1992, pp. 491-494.
Kimihisa Aihara et al, "Conductance Oscillations in a Quantum Wire with a Stub Structure due to Quantum Interference", Jpn. J. Appl. Phys., vol. 31, 1992 (Jul.), pp. L916-L919.
Aihara Kimihisa
Mizutani Takashi
Yamamoto Masafumi
Bowers Courtney A.
Crane Sara W.
Lynt Christopher H.
Nippon Telegraph and Telephone Corporation
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