Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1994-11-30
1996-05-21
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, H01L 310328, H01L 310336
Patent
active
055192327
ABSTRACT:
A quantum interference device comprises a semi-insulating GaAs substrate; GaAs and AlGaAs layers sequentially formed with high purity on the substrate; a two-dimensional electron gas layer formed in the GaAs layer and serving as a channel; source/drain regions formed on the semi-insulating GaAs substrate and at both ends of a laminated portion composed of the GaAs/AlGaAs layers; and a gate formed on the AlGaAs layer and having a periodic structure wherein the length thereof varies in a periodic manner in a transverse direction. In the device, the electron gas layer formed in the GaAs layer is used as an electron path, and the phases of electrons passing along different electron paths are caused to interfere with each other by the gate, thereby causing the current of a drain therein to be maximized or minimized. The transconductance can be significantly increased.
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de Vegvar et al, "Tunable Aharonov-Bohm effect in an electron interferometer". 50 Rapid Communications 3491 (Aug. 15, 1989).
Tokura et al, "Conductivity oscillation due to quantum interference in a proposed wash-board transistor", 22 Appl. Phys. Lett 1807 (Nov. 30, 1987).
Allee et al, "Engineering lateral quantum interference devices using electron beam lithography and molecular beam epitaxy", B7(6) Nov./Dec. 1989, J. Vac. Sci, Tech.
Lee Seong-Jae
Park Kyoung-Wan
Shin Min-Cheol
Electronics and Telecommunications Research Institute
Fahmy Wael M.
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