Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2006-05-02
2006-05-02
Nguyen, Thanh (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257S012000, C257S014000
Reexamination Certificate
active
07038232
ABSTRACT:
The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.
REFERENCES:
patent: 6040592 (2000-03-01), McDaniel et al.
patent: 6130422 (2000-10-01), Bawolek et al.
patent: 6258712 (2001-07-01), Wang
patent: 6372603 (2002-04-01), Yaung et al.
patent: 6406987 (2002-06-01), Huang
patent: 6946352 (2005-09-01), Yaung
patent: 2002/0089004 (2002-07-01), Rhodes
Chen Ho-Ching
Lin Jeng-Shyan
Tseng Chien-Hsien
Wuu Shou-Gwo
Yaung Dun-Nian
Nguyen Thanh
Taiwan Semiconductor Manufacturing Co. Ltd.
LandOfFree
Quantum efficiency enhancement for CMOS imaging sensor with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Quantum efficiency enhancement for CMOS imaging sensor with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum efficiency enhancement for CMOS imaging sensor with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3584680