Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Patent
1992-08-24
1997-07-08
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
257 12, 257 16, H01L 4700, H01L 2906
Patent
active
056464185
ABSTRACT:
A quantum effect switching device comprising a substrate 12, first and second tunnel barriers 14 and 18, and a quantum well 16. The current between a drain region 20 and the substrate 12 can be switched by placing a potential on a gate layer 24. The potential on the gate layer 24 selectively modulates the effective dimensions of the quantum well 16 to alter the allowed energy levels within the conduction band of the quantum well 16.
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patent: 4758870 (1988-07-01), Hase et al.
patent: 4912531 (1990-03-01), Reed et al.
patent: 5023671 (1991-06-01), DiVincenzo et al.
Seabaugh, IEEE Trans on Electron Devices, vol. 36, No. 10, Oct. 1989, pp. 2328-2334.
Broekaert et al, Applied Physics Letters vol. 53, No. 16, 17 Oct. 1988, pp. 1545-1547.
Frazier Gary A.
Luscombe James H.
Brady W. James
Clark Jhihan B.
Donaldson Richard L.
Hoel Carlton H.
Saadat Mahshid D.
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