Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-09-26
1998-01-20
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 22, H01L 2906, H01L 310328, H01L 310336, H01L 31072
Patent
active
057104360
ABSTRACT:
A quantum effect device includes a first layer having a plurality of charge confinement regions, a second layer opposing the first layer and separated from the first layer, the second layer having charges at a high concentration and consisting of a metal layer or a semiconductor layer, and a third layer consisting of an insulating layer or a semiconductor layer having a large band gap between the first layer and the second layer.
REFERENCES:
patent: 5313484 (1994-05-01), Arimoto
Appl. Phys. Lett., vol. 62, No. 7 pp. 714-716, Feb. 15, 1993, Craig S. LENT, et al., "Bistable Saturation In Coupled Quantum Dots For Quantum Cellular Automata".
Katoh Riichi
Sakai Tadashi
Suzuki Taketoshi
Takahashi Shigeki
Tanamoto Tetsufumi
Crane Sara W.
Kabushiki Kaisha Toshiba
Wille Douglas A.
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