Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1994-10-11
1997-03-18
Shah, Alpesh M.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257 14, 36423241, 364244, 364DIG1, H01L 3300
Patent
active
056131402
ABSTRACT:
A novel quantum dot-tunnel device having a revolutionarily faster processing speed and higher processing precision than conventional computer computation, which device has an array consisting of a large number of quantum dots which confine electrons three-dimensionally, with the coupling among quantum dots, that is, the tunnel transition probability, being defined by controlling the positional relationship and the shape of the quantum dots in accordance with an algorithm of predetermined information processing, so that the algorithm is expressed in solid state rather than by a conventional computer program. The electron transition among quantum dots occurs instantaneously and wave mechanically with a strict precision, and the results of the information processing are expressed as a spatial distribution of electrons over the plurality of quantum dots. Data is written into the quantum dots by irradiating light (high energy) of a wavelength corresponding to the band gap energy, for example, to a specific region on the array, while data is read out by irradiating light (low energy) of a wavelength corresponding to the energy gap between a ground level of the valence band and a first excited level. Also, an information processing apparatus and method using the device.
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Shah Alpesh M.
Sony Corporation
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