Quantum dot structures

Details Quantum dot structures Quantum dot structures

2007-10-16

2007-10-16

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S017000, C257S628000, C372S045010

Reexamination Certificate

active

10971555

ABSTRACT:
Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.

REFERENCES:
patent: 5541949 (1996-07-01), Bhat et al.
patent: 5543354 (1996-08-01), Richard et al.
patent: 5557627 (1996-09-01), Schneider et al.
patent: 5608229 (1997-03-01), Mukai et al.
patent: 5614435 (1997-03-01), Petroff et al.
patent: 5710436 (1998-01-01), Tanamoto et al.
patent: 5714765 (1998-02-01), Noetzel et al.
patent: 5726462 (1998-03-01), Spahn et al.
patent: 5781575 (1998-07-01), Nilsson
patent: 5817538 (1998-10-01), Mukai et al.
patent: 5881086 (1999-03-01), Miyazawa et al.
patent: 5930278 (1999-07-01), Menigaux
patent: 5953356 (1999-09-01), Botez et al.
patent: 6052400 (2000-04-01), Nanbu et al.
patent: 6117699 (2000-09-01), Lemoff et al.
patent: 6177684 (2001-01-01), Sugiyama
patent: 6285704 (2001-09-01), Kullander-Sjoberg et al.
patent: 6329668 (2001-12-01), Razeghi
patent: 6366597 (2002-04-01), Yuen et al.
patent: 6369403 (2002-04-01), Holonyak, Jr.
patent: 6489175 (2002-12-01), Jiang et al.
patent: 6583436 (2003-06-01), Petroff et al.
patent: 6600169 (2003-07-01), Stintz et al.
patent: 6642070 (2003-11-01), Jiang et al.
patent: 6782021 (2004-08-01), Huang et al.
patent: 6816525 (2004-11-01), Stintz et al.
patent: 2001/0050934 (2001-12-01), Choquette et al.
patent: 2002/0022286 (2002-02-01), Nikolaev et al.
patent: 2002/0051615 (2002-05-01), Walpole et al.
patent: 2002/0114367 (2002-08-01), Stintz et al.
patent: 2003/0036217 (2003-02-01), Richard et al.
PCT International Search Report and Written Opinion, PCT/US04/35293, Oct. 12, 2006, 8 pages.
Asryan, L.V et al. “Charge Neutrality Violation In Quantum -Dot Lasers; IEEE Journal Of Selected Topics In Quantum Electronics” vol. 3, No. 2; Apr. 1997; pp. 148-157.
Bimberg, D. et al. “InGaAs-GaAs Quantum Dot Lasers; IEEE Journal Of Selected Topics in Quantum Electronics,” vol. 3, No. 2; Apr. 1997; pp. 196-205.
Bloch, J. et al., “Room-temperature 1.3 um emission from InAs quantum dots grown by metal organic chemical vapor deposition,” Applied Physics Letters, American Institute of Physics, New York, U.S., vol. 75, No. 15, Oct. 11, 1999, pp. 2199-2201.
Bossert, D.J. et al. “Improved Method For Gain/Index Measurements Of Semiconductor Lasers; Electronics Letters” vol. 32, No. 4; Feb. 15, 1996; pp. 338-339.
Bossert, David J. et al. “Gain, Refractive Index, And alpha.-Parameter In InGaAs-GaAs SQW Broad-Area Lasers.” IEEE Photonics Technology Letters, vol. 8, No. 3; Mar. 1996; pp. 322-324.
Brandt, O. “Formation And Morpholoyg Of InAs/GaAs Heterointerfaces;” Physical Review; vol. 45, No. 15; Apr. 15, 1992; pp. 8443-8452.
Brault, J. et al. “Role Of Buffer Surface Morphology And Alloying Effects On The Properties Of InAs Nanostructures Grown On InP(001)” Applied Physics Letters; vol. 73, No. 20; Nov. 16, 1998; pp. 2932-2934.
Brault, J. et al. “Staggered Vertical Self-Organization Of Stacked InAs/InA1As Quantum Wires On INP(001)” Applied Surface Science; vol. 162-163; Aug. 2000; pp. 584-589.
Choo, Heung Ro. et al. “Improvement Of Linewidth Enhancement Factor In 1.55-mu.m Multiple-Quantum-Well Laser Diodes” IEEE Photonics Technology Letters; vol. 10, No. 5; May 1998; pp. 645-647.
Chou, S.T. et al. “Growth Of Gaxln1-x As Quantum Wire Heterostructures By The Strain-Induced Lateral-Layer Ordering Process” J. Vac. Sci. Technol. B.; vol. 13, No. 2; Mar./Apr. 195; pp. 650-652.
Chyi, Jen-Inn et. al. “Formation Of Self-Organized In0.5Ga0.5 As Quantum Dots On GaAs By Molecular Beam Epitaxy.” Journal Of Crystal Growth; vol. 175, 176; 1997; pp. 777-781.
Dutta, N.K. et al. “Strain Compensated InGaAs-GaAsP-InGaP Laser”; IEEE Photonics Technology Letters vol. 8, No. 7; Jul. 1996; pp. 852-854.
Eliseev, P.G.et al. “Gain In Ultra-Low-Threshold InAs/InGaAs Quantum Dot Lasers; Conference” 2000 IEEE 17.sup.th International Semiconductor Laser Conference; Sep. 25-28, 2000; pp. 65-66.
Eliseev, P.G. et al. “Ground-State Emission And Gain In Ultralow-Threshold InAs-InGaAs Quantum-Dot Lasers” IEEE Journal On Selected Topics In Quantum Electronics; vol. 7, No. 2; Mar./Apr. 2001; pp. 135-142.
Eliseev, P.G. et al. “Optical Gain In InAs/InGaAs Quantum -Dot Structures; Experiments And Theoretical Model” Quantum Electronics 30 (8); 2000; pp. 664-668.
Eliseev, P.G. et al. “Transition Dipole Moment Of InAs/InGaAs Quantum Dots From Experiments On Ultralow-Threshold Laser Diodes” Applied Physics Letters, vol. 77, No. 2; Jul. 10, 2000; pp. 262-264.
Eliseev, P.G. et al. “Tunable Grating-Coupled Laser Oscillation And Spectral Hole Burning In An InAs Quantum-Dot Laser Diode” IEEE Journal Of Quantum Electronics; vol. 36, No. 4; Apr. 2000; pp. 479-485.
Evans, P.W. et al., “Edge-emitting quantum well heterostructure laser diodes with auxiliary native-oxide vertical cavity confinement,” Applied Physics Letters, American Institute of Physics, New York, U.S., vol. 67, No. 21, Nov. 20, 1995, pp. 3168-3170.
Fiore, A. et al. “Time-Resolved Characterization Of InAs/InGaAs Quantum Dot Gain Material For 1.3 um Laser On Gallium Arsenide” CLEO 2000 Conference; May 2000; p. 348.
Garcia, J.M. et al., “Electronic states tuning of InAs self-assembled quantum dots,” Applied Physics Letters, American Institute of Physics, New York, U.S., vol. 72, No. 24, Jun. 15, 1998, pp. 3172-3174.
Gingrich, H.S.et al. “Broadly Tunable External Cavity Laser Diodes With Staggered Thickness Multiple Quantum Wells” IEEE Photonics Technology Letters; vol. 9, No. 2; Feb. 1997; pp. 155-157.
Gonzalez, L. et al. “Influence Of Buffer-Layer Surface Morphology On The Self-Organized Growth Of InAs On InP(001) Nanostructures” Applied Physics Letters; vol. 76, No. 9; Feb. 28, 2000; pp. 1104-1106.
Grundmann, M.; and Bimberg, D.; “Theory Of Random Population For Quantum Dots” Physical Review B; vol. 55, No. 15; Apr. 15, 1997; pp. 9740-9745.
Guo, S.P. et al. “InAs Self-Organized Quantum Dashes Grown On GaAs (211)B” Appl. Phys. Letters, vol. 70, No. 20; May 19, 1997; pp. 2738-2740.
Hakki, Basil W., and Paoli, Thomas L. “Gain Spectra In GaAs Double-Heterostructure Injection Lasers” Journal Of Applied Physics, vol. 46, No. 3; Mar. 1975; pp. 1299-1306.
Hinzer, K. et al. “Room Temperature Operation Of AllnAs/AIGaAs Quantum Dot Lasers” Physica E, vol. 2; 1998; pp. 729-733.
Huang, X. et al. “Efficient High-Temperature CW Operation Of Oxide Confined Long-Wavelength InAs Quantum Dot Lasers” CLEO 2000 Conference; May 2000; pp. 348-349.
Huang, Xiaodong et al. “Demonstration Of Passive Q-Switching And Passive Mode-Locking In 1.3 .mu.m. Two-Section InAs Quantum Dot Lasers” Conference: CLEO 2001; May 2001; p. 359.
Huang, Xiaodong et al. “Efficient High-Temperature CW Lasing Operation Of Oxide-Confined Long-Wavelength InAs Quantum Dot Lasers” Electronics Letters; vol. 36, No. 1; Jan. 6, 2000.
Huang, Xiaodong et al. “Very Low Threshold Current Density Room Temperature Continuous-Wave Lasing From A Single-Layer InAs Quantum-Dot Laser” IEEE Photonics Technology Letters, vol. 12, No. 3; Mar. 2000; pp. 227-229.
Huffaker, D.L.; and Deppe, D.G. “Electroluminescence Efficiency of 1.3 um Wavelength InGaAs/GaAs Quantum Dots” Applied Physics Letters; vol. 73, No. 4; Jul. 27, 1998, pp. 520-522.
Kaspi, R. “Improved Compositional Abruptness At The InGaAs On GaAs Interface By Presaturation With In During Molecular-Beam Epitaxy” Appl. Phys. Lett.; vol. 67, No. 6; Aug. 7, 1995; pp. 819-821.
Kim, Jin K. et al., “Lateral Carrier Confinement in Miniature Lasers Using Quantum Dots,” IEEE Journal of Selected Topics in Quantum Electro

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