Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Reexamination Certificate
2011-06-28
2011-06-28
Michener, Jennifer K. (Department: 1728)
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
C136S264000, C136S252000, C438S063000, C438S086000
Reexamination Certificate
active
07968792
ABSTRACT:
A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg<2.0 eV, in the form of quantum dots (QD's) filling each open space defined by the matrix of WBG semiconductor material and establishing a heterojunction therewith. The active PV layer is preferably fabricated by a co-sputter deposition process, and the QD's constitute from about 40 to about 90 vol. % of the active PV layer.
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Harkness, IV Samuel D.
Richter Hans J.
Mershon Jayne
Michener Jennifer K.
Seagate Technology LLC
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