Quantum dot semiconductor device

Details Quantum dot semiconductor device Quantum dot semiconductor device

2008-03-13

2010-11-09

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S014000, C257SE29071, C257SE29245, C257SE31033, C257SE33008, C438S962000

Reexamination Certificate

active

07829880

ABSTRACT:
A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.

REFERENCES:
patent: 6859477 (2005-02-01), Deppe et al.
patent: 2006/0220001 (2006-10-01), Uetake et al.
patent: 2007/0194299 (2007-08-01), Yasuoka et al.
patent: 2003-23219 (2003-01-01), None
patent: 2003-124574 (2003-04-01), None

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